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Magnetron sputtering coating
Magnetron Sputtering Cobalt Iron Boron Plating
  • Magnetron Sputtering Cobalt Iron Boron Plating

Magnetron Sputtering Cobalt Iron Boron Plating


Advanced Institute Technology magnetron sputtering cobalt iron boron plating, can be customized with various specifications as needed; Welcome to inquire.
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Cofeb is a advanced film preparation technology that is commonly used in magnetic layers in magnetic random memory (MRAM). COFEB's chemical components are alloys composed of cobalt (CO), iron (FE) and boron (B) elements. The preparation process of magnetic control sputtering cobalt -plated iron boron mainly involves three steps: atmosphere pre -treatment, base treatment, and magnetic sputter.

In the atmosphere pre -processing, the surface to be treated is exposed to high vacuum or specific atmosphere environment to remove pollutants on the surface. This is to ensure the accuracy of the coating and the adhesion of the film and the base.

Base treatment is pre -processing on the base surface. The purpose is to increase the crystallization and film quality of the magnetic sputter film, and improve its magnetic performance. Common treatment methods include heating, magnetic field treatment and surface cleaning.

Magnetic sputtering is a alloy target prefained in the vacuum room with an electronic beam or ion beam, so that the atom or ion that splason the surface of the target surface is stained on the base to be treated. The COFEB alloy composition in the target is evenly distributed on the base surface during the sputtering process to form a dense film. Generally, sputtering conditions such as gas pressure, ion beam energy, and splash time, etc., will be optimized during the preparation process to obtain the required film performance.

Magnetic sputtering cobalt -plated iron boron (COFEB) film has many excellent characteristics, such as high -correction, high saturated magnetization strength, and low living temperature. Therefore, in the field of magnetic memory, especially in MRAM, it is widely used in the magnetic layer of magnetic random memory.

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