IGBT sintered silver process - achieving clean bonding interface

IGBT sintered silver processAs an important electronic device packaging technology, it has a wide range of applications in modern industrial fields. In practical applications, ensuring the quality of the sintering interface has become one of the key factors affecting device performance and reliability. This article will explore the implementation methods of clean bonding interface in IGBT sintered silver process from different perspectives.

Increase interface surface energy - improve bonding quality

In order to ensure the bonding quality of the sintering interface, attention needs to be paid to the issue of interface surface energy. Low interface surface energy may result in insufficient wetting of silver powder, affecting the bonding effect. Therefore, in the IGBT sintering silver process, it is recommended to take measures to increase the interface surface energy. For example, surface treatment methods such as nanomaterial coating and plasma treatment can be used to improve the interfacial surface energy, enhance the bonding strength between silver powder and substrate, and improve the quality and reliability of the sintered interface.

Interface opening air duct - solving the problem of excessive bonding size

In the IGBT sintering silver process, when the bonding size is too large, it is easy to cause the gas to not be completely discharged during the sintering process, which affects the final bonding effect. To solve this problem, it is recommended to open air ducts on interfaces with large bonding sizes. By appropriately designing and arranging gas slots, gases can be effectively discharged during the sintering process, ensuring the quality and reliability of interface bonding.

Uniform application of sintered silver - ensuring interface quality

In the IGBT sintering silver process, when it is necessary to perform on an interfaceSintered silver coatingUniform coating is very important. Different coating thicknesses or uneven coating can lead to uneven temperature distribution during the sintering process, which in turn affects the quality and performance of the interface. Therefore, before applying sintered silver, appropriate measures need to be taken to ensure uniform coating, such as using uniform coating machinery, accurately controlling the coating amount, etc., to ensure that the silver powder can fully melt and diffuse during the sintering process, ensuring interface quality and reliability.

Increase upper interface pressure - improve interface bonding quality

In the IGBT sintered silver process, increasing the pressure on the upper interface appropriately can improve the quality of the interface when it is necessary to apply pressure on another interface. By applying appropriate pressure, silver powder can better bond with the substrate, increase the contact area of the interface, and improve the metal bonding strength and reliability of the sintered interface.

Reasonably controlling sintering process parameters - ensuring interface sintering quality

In the IGBT sintering silver process, the parameter settings of the baking stage and sintering stage play a crucial role in the sintering quality of the interface. Firstly, for the case where the interface is a copper substrate, it is recommended to use nitrogen protection at 150 degrees Celsius for 20-30 minutes during the pre drying stage to avoid copper oxidation. Secondly, during the pre pressing stage, appropriate pressure (about 0.5-1MPa) and temperature increase (150 degrees) should be applied to ensure the initial sintering quality of the interface. Finally, during the pressing stage, by adjusting the parameters of temperature (220-280 degrees) and pressure (10-30MPa), the sintering quality and reliability of the interface can be further improved.

Gradual cooling protection device - ensuring stable performance after sintering

In the IGBT sintering silver process, sufficient attention should also be paid to the cooling process after sintering is completed. To ensure stable performance of the device, it is recommended to gradually cool it down to room temperature in the oven before removing the device. This can avoid the thermal stress at the sintering interface caused by rapid cooling, thereby increasing the stability and reliability of the interface.

Conclusion: The implementation method of cleaning the bonding interface can improveIGBT sintered silver processQuality and reliability. Measures such as controlling the surface energy of the interface, solving the problem of excessive bonding size, uniform coating, increasing the upper interface pressure, reasonably controlling the sintering process parameters, and gradually cooling down the protective devices all play a positive role in improving the quality of the sintering interface. By continuously optimizing the process flow, better guarantees will be provided for the application of IGBT sintered silver technology.