Preparation method of secondary encapsulation slurry and encapsulation layer for small and micro chip resistors

Advanced Institute of Technology Small and Micro Secondary encapsulation paste for chip resistorsThe preparation method of the secondary encapsulation slurry is as follows: 5% black pigment, 20% metal oxide, 1% 2% additive, 1% 5% curing agent, 20% organic resin, and the rest are solvents, in weight percentage; The present invention solves the problem of narrow adaptability of the existing encapsulation slurry process through formula innovation, and also solves the printing flow infiltration, difficulty in printing, film adhesion after drying, film brittleness, and fragile folding of encapsulation slurry for small and micro chip resistor layers, avoiding the huge losses caused by intermediate scrap of semi-finished products

Used for chip resistorsglass fritAccording to weight percentage content, it includes the following components: lead-free glass powder 62-75%, inorganic additives 0.1-5%, pigments 0.1-5%, organic carrier 15-38%;

Preparation of organic carrier: Weigh the components of the organic carrier by weight percentage, mix them, heat and dissolve them completely at 60-90 ℃, disperse them with a mixer, and then filter to remove impurities and partially dissolved parts;

Preparation of glass slurry: Weigh and mix the prepared lead-free glass powder, organic carrier, alumina, tin oxide, and pigment according to weight percentage, and use a three roll machine equipped with ceramic roller surface, plastic baffle, and ceramic blade to roll to a particle size of less than 10 μ m, using a plastic shovel during the rolling process.

Chip resistor pasteIt is composed of conductive phase, glass phase, inorganic additives, and organic carrier. The specifications and sizes of the surface mount resistors prepared by it include various models such as 1206, 0805, 0603, 0402, 0201, 01005, etc; The square resistance ranges from 0.1 ω to 10m ω, with a wide variety of products and strong complexity. To meet the needs of low, medium, and high resistance ranges, the conductive phase composition is also significantly different. The conductive phase in the low resistance range is usually silver and palladium, while the conductive phase in the medium resistance range is usually ruthenium oxide; The conductive phase in the high resistance range is usually lead ruthenate.
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